| 摘要 |
PURPOSE:To perform heat treatment of resist without thermal damage on the resist using low molecular-weight resin, by performing resist baking at a low temperature in a pressure reduced state. CONSTITUTION:The pressure in a pressure reduced chamber 2 is kept at 0.1 torr. A wafer 1, on which resist, e.g., TSMR-8800, is applied, is heated to 60 deg.C with a hot plate 3. A solvent such as ECA, which is included in the resist using low molecular-weight resin, can be removed at this temperature. In this way, the solvent, whose boiling point is 140-150 deg.C in atmosphere, can be removed at the low temperature of 100 deg.C or less. Therefore the baking of the resist, which is applied on the wafer, can be performed without thermal damage on the resist using the low molecular-weight resin. |
