| 发明名称 |
TRANSISTOR MIS ET PROCEDE DE FABRICATION D'UN TEL TRANSISTOR SUR UN SUBSTRAT SEMICONDUCTEUR |
| 摘要 |
The invention concerns an MOS transistor comprising a central channel region (118), source (114) and drain (116) regions arranged on either side of the channel, and a gate provided substantially above the channel region. The invention is characterised in that the channel has a central doped part (140) located between the source and drain regions, and separated from said source and drain regions.
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| 申请公布号 |
FR2788629(A1) |
申请公布日期 |
2000.07.21 |
| 申请号 |
FR19990000389 |
申请日期 |
1999.01.15 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DELEONIBUS SIMON;GUEGAN GEORGES;CAILLAT CHRISTIAN;COUDERT FABIEN |
| 分类号 |
H01L29/41;H01L21/28;H01L21/336;H01L29/10;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L21/335;H01L29/36;H01L29/772 |
主分类号 |
H01L29/41 |
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