| 摘要 |
PURPOSE:To form a wiring pattern in a minute form when the Al wiring pattern having the prescribed shape is to be formed on a semiconductor substrate by a method wherein a resist is applied on the substrate, the resist is formed corresponding to the pattern intending to obtain, and after exposure and development are performed to provide overhangs in the reformed layer, Al is adhered thereon. CONSTITUTION:The novolak resist 12 is applied on the semiconductor substrate 11, and the substrate is let alone in CF4+5% O2 plasma for 5-30min to make the reformed layer 13 of which dissolvability to a developer is reduced to be generated on the surface of the resist 12. Then a mask having openings corresponding to the conductor pattern intending to obtain is provided on the layer 13, it is exposed to UV rays, and the exposed parts 31 are formed in the layer 13 and the resist 12. After then, development is performed, the exposed parts of the resist 12 are totally removed, the layer 13 is made as the overhang type, the Al layer is adhered on the whole surface to make the Al layers 15, 14 being discontinuous at the part between the upper part of the layer 13 and the removed resist 12 part to be generated. Then the resist 12 is removed together with the layers 13, 15 positioning thereon to obtain the desired Al layer 14 on the substrate 11. |
