| 摘要 |
An internal voltage generator of a semiconductor memory device is provided to assure margin by preventing off-leakage current consumption. An internal voltage generation part(30) generates an internal voltage with a constant level using a reference voltage by receiving an external voltage, and outputs the internal voltage to an internal voltage output node. A control part(20) controls the internal voltage generation part, according to a control signal generated according to operation mode of a semiconductor memory device. A power switching part(40) switches an external voltage to the internal voltage output node, according to the control signal generated according to the operation mode of the semiconductor memory device.
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