| 摘要 |
Aqueous polishing slurry is provided to achieve the modular removal of barriers with increased copper removal rates, to remove barriers with controlled dielectric erosion and copper dishing, and therefore to be useful for polishing a semiconductor substrate having copper interconnects chemical-mechanically. The aqueous polishing slurry comprises 0.01 to 25 wt% of an oxidizing agent, 0.1 to 50 wt% of abrasive particles, 0.001 to 3 wt% of polyvinyl pyrrolidone, 0.01 to 10 wt% of an inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 wt% of a phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 wt% of a complexing agent formed during polishing and balance water; and the aqueous polishing slurry having a pH of at least 8.
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