| 摘要 |
The invention relates to a method for doping one side of semiconductor bodies, especially of silicon wafers. To this end, a conventional oxide layer (2, 3) is firstly deposited on both the side (DS) of the substrate (1) to be doped and on the side (GS) of a substrate (1) which is not to be doped. Afterwards, a doping layer (4) containing the doping agent is deposited on the oxide layer (3) of the side (DS) which is to be doped. In a diffusion step, the doping agent firstly passes in a uniform manner through the oxide layer (3) located between the substrate (1) and the doped layer (4). The doping agent then penetrates the substrate (1), and produces a uniform doping.
|
