发明名称 PRODUCTION OF DIELECTRIC THIN FILM AND APPARATUS FOR PRODUCTION THEREFOR
摘要 PURPOSE:To make mass production of thin films at a low temp. with high accuracy and good stability, uniformity and reproducibility at the time of depositing the perovskite type compd. dielectric films contg. ZC expressed by specific formula by a magnetron sputtering method by forming an initial layer not contg. Zr. CONSTITUTION:After an initial layer not contg. the Zr is formed, a main deposition layer contg. the Zr is formed at the time of depositing the perovskite type compd. films composed of (Pb1-xLax)(ZryTi1-y)1-x/4O3(0<=x<1, 0<=y<1). Sintered oxide ferroelectric materials are arranged as sputtering targets 2 to 4 in symmetrical positions on the same circumference. Substrates 5 are radially arranged on a substrate holder 6 in such a manner that the substrates are passed above these targets by rotation of the holder 6. The emitted light in plasma is introduced through an optical fiber 10 installed outside the chamber 1 in proximity to a peep window 9 of a chamber 1 to a photo cell 11 and is displayed as emitted light intensity spectra for respective wavelengths at a terminal 12.
申请公布号 JPH07331432(A) 申请公布日期 1995.12.19
申请号 JP19940127368 申请日期 1994.06.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAYASHI SHIGENORI;KOMAKI KAZUKI;JINNO ISAKU;KAMATA TAKESHI;TAKAYAMA RYOICHI;HIRAO TAKASHI
分类号 C30B23/08;C23C14/08;C23C14/34;C30B29/22;H01L21/203;H01L21/314;H01L21/336;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/10;H01L27/108;H01L29/788;H01L29/792;H01L41/39 主分类号 C30B23/08
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