Semiconductor devices including a capping layer and methods of forming semiconductor devices including a capping layer

摘要

Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a capping layer on a metal pattern and on an adjacent portion of an insulating layer, the capping layer comprising a first etch selectivity, with respect to the insulating layer, on the metal pattern and a second etch selectivity, with respect to the insulating layer, on the portion of the insulating layer. Moreover, the method may include forming a recess region adjacent the metal pattern by removing the capping layer from the portion of the insulating layer. At least a portion of the capping layer may remain on an uppermost surface of the metal pattern after removing the capping layer from the portion of the insulating layer. Related semiconductor devices are also provided.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a metal pattern in an insulating layer, forming a capping layer on the metal pattern and the insulating layer, the capping layer comprising a first portion on the metal pattern and a second portion on the insulating layer, wherein the first portion of the capping layer comprises a metal nitride and the second portion of the capping layer comprises a metal oxynitride; removing the second portion of the capping layer to expose a portion of the insulating layer; and forming a recess region adjacent the metal pattern by removing the portion of the insulating layer that is exposed by the removing of the second portion of the capping layer.