发明名称 |
Compensating chemical mechanical wafer polishing apparatus and method |
摘要 |
A compensating chemical mechanical wafer polishing apparatus and its related polishing method, which makes end point detection easy, minimizes slurry consumption, and requires less installation space and, in which a main polishing head of diameter smaller than the wafer and a compensating polishing head are used to polish the wafer, which is upwardly disposed in contact with the polishing heads. By means of the operation of the compensating polishing head to polish the wafer over the area where the main polishing head cannot effectively evenly polish, satisfactory polishing effect is achieved.
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申请公布号 |
US2003100196(A1) |
申请公布日期 |
2003.05.29 |
申请号 |
US20020117088 |
申请日期 |
2002.04.08 |
申请人 |
CHUNG SHAN INSTITUTE OF SCIENCE & TECHNOLOGY |
发明人 |
LAI JER-SHYONG;PAN WEN-CHUEH;FANN YANG-JIANN;WANG YIH-HSING;HE CHIEN-CHENG;HSU CHAUG-LIANG |
分类号 |
B24B7/30;B24B29/04;B24B37/04;B24B53/007;B24B57/02;H01L21/304;H01L21/306;H01L21/469;(IPC1-7):H01L21/469 |
主分类号 |
B24B7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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