| 发明名称 | Semiconductor device including a contact plug with barrier materials | ||
| 摘要 | Disclosed herein is a semiconductor device that comprises a plug including an upper portion, a lower portion and a side surface and comprising tungsten, a barrier metal comprising tungsten nitride and covering the side surface and the lower portion of the contact plug, a conductive layer, and a barrier layer comprising titanium and intervening between the barrier metal and the first conductive layer. | ||
| 申请公布号 | US9379199(B2) | 申请公布日期 | 2016.06.28 |
| 申请号 | US201414497716 | 申请日期 | 2014.09.26 |
| 申请人 | Micron Technology, Inc. | 发明人 | Miyazaki Tatsuya |
| 分类号 | H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L29/45;H01L23/48;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092 | 主分类号 | H01L29/76 |
| 代理机构 | Wells St. John P.S. | 代理人 | Wells St. John P.S. |
| 主权项 | 1. A semiconductor device comprising: a contact plug including an upper surface, a lower surface and a side surface extending between the upper and lower surfaces, the contact plug comprising tungsten; a barrier metal comprising tungsten nitride and covering the side surface and the lower surface of the contact plug, the barrier metal having an upper surface that is coplanar with the upper surface of the contact plug; a first conductive layer; and a barrier layer comprising titanium and intervening between the barrier metal and the first conductive layer. | ||
| 地址 | Boise ID US | ||