发明名称 |
SURFACE TREATMENT OF LOW-K SIOF TO PREVENT METAL INTERACTION |
摘要 |
A method for using low dielective SiOF in a process to manufacture semiconductor products, comprising the steps of: obtaining a layer of SiOF; and depleting fluorine from a surface of the SiOF layer. In a preferred embodiment, the depleting step comprises the step of treating the surface of the layer of SiOF with a plasma containing hydrogen. It is further preferred that the treated surface be passivated. The invention also encompasses a semiconductor chip comprising an integrated circuit with at least a first and second layers, and with a dielective layer of SiOF disposed between the layers, wherein the SiOF dielective layer includes a first region at one edge thereof which is depleted of fluorine to a predetermined depth.
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申请公布号 |
US2001044203(A1) |
申请公布日期 |
2001.11.22 |
申请号 |
US19990443376 |
申请日期 |
1999.11.19 |
申请人 |
HUANG RICHARD J.;MORALES GUARIONEX;CHAN SIMON |
发明人 |
HUANG RICHARD J.;MORALES GUARIONEX;CHAN SIMON |
分类号 |
H01L21/316;H01L23/532;(IPC1-7):H01L21/476;H01L23/58 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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