发明名称 |
Crystal imprinting methods for fabricating subsrates with thin active silicon layers |
摘要 |
Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.
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申请公布号 |
US2006286781(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20050154907 |
申请日期 |
2005.06.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;MANDELMAN JACK A.;TONTI WILLIAM R. |
分类号 |
H01L21/00;H01L21/20 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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