Methods for fabricating microelectronic capacitor structures

摘要

A method of fabricating a capacitor includes the steps of forming a layer of a conductive material on a substrate, and forming a patterned oxidation resisting layer on the conductive layer thereby defining exposed and unexposed portions of the conductive layer. The exposed portion of the conductive layer can be selectively oxidized thereby defining an oxide etch mask covering the exposed portions of the conductive layer. Portions of the conductive layer not covered by the oxide etch mask can be selectively etched thereby defining a vertical structure of the conductive material extending from the microelectronic substrate. This vertical structure can be coated with a dielectric layer, and a second conductive layer can be formed on the dielectric layer.