发明名称 METAL INSULATOR METAL CAPACITOR AND METHOD FOR MANUFACTURE THEREOF
摘要 An MIM(Metal Insulator Metal) capacitor and a manufacturing method thereof are provided to improve reliability of the device by increasing MIM capacitance in the same area without an additional mask process. First to third intermetal insulating layers(100,110,125) include a bottom metal layer(120) and are formed successively. A first capacitor bottom metal layer(130,140), a first capacitor insulating layer(150), a first capacitor top metal layer(160) and a first capping layer film(170) are formed on a part of the third intermetal insulating layer. A first interlayer insulating layer(180), a fifth intermetal insulating layer(190), and a second interlayer insulating layer(200) are successively formed in the third intermetal insulating layer including the first capping layer film. The second capacitor bottom metal layer(210) is formed to be connected to the first capacitor top metal layer by passing through the second interlayer insulating layer and the first capping layer film. A first protective film(220) is formed on the second capacitor bottom metal layer. The second capacitor top metal layer is formed on the part of the first protective film in order to be connected to the second capacitor bottom metal layer by passing through a part of the first protective film. Second to fourth protective films(240,250,260) are successively formed on the first protective film including the second capacitor top metal layer.
申请公布号 KR20090022042(A) 申请公布日期 2009.03.04
申请号 KR20070087066 申请日期 2007.08.29
申请人 DONGBU HITEK CO., LTD. 发明人 KANG, MYUNG IL
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
主权项
地址