发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To realize low thermal resistance and low inductance to provide a compact/high-output IGBT module. <P>SOLUTION: An element of an upper arm is bonded to a power supply circuit pattern on a ceramic substrate. A grounding pattern of the ceramic substrate penetrates ceramics, and connected to a fin-provided copper base connected to a rear surface. An element of a lower arm is bonded to the grounding pattern with the front and rear reversed to the upper arm element. Further, A surface which is not connected to the substrate of the upper and lower arm elements is connected to be an output electrode. The fin-provided copper base is covered with a resin water passage cover to be cooled with water directly. By such a structure as above, a low inductance is achieved by significant shortening of wiring, and the lower arm element is heat-released without insulation, so that the low thermal resistance can be achieved in spite of a small bonding area. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009177038(A) 申请公布日期 2009.08.06
申请号 JP20080015756 申请日期 2008.01.28
申请人 HITACHI LTD 发明人 TANBA AKIHIRO
分类号 H01L25/07;H01L23/34;H01L23/473;H01L25/18 主分类号 H01L25/07
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