SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

摘要

A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is over the first III-V compound layer and is different from the first III-V compound layer in composition. A carrier channel is located at an interface of the first III-V compound layer and the second III-V compound layer. Slanted field plates are in an opening in a dielectric layer over the second III-V compound layer; the gate electrode is disposed in the opening.

主权项

1. A semiconductor device comprising:
a first III-V compound layer; a second III-V compound layer over the first III-V compound layer and different from the first III-V compound layer in composition, wherein a carrier channel is located at an interface of the first III-V compound layer and the second III-V compound layer, and wherein the second III-V compound layer has a first composition; an opening in a dielectric layer over the second III-V compound layer, wherein the opening continues through the dielectric layer to extends below a top surface of the second III-V compound layer; slanted field plates in the opening, wherein the slanted field plates interface the first composition; and a gate electrode in the opening and interfacing with the first composition of the second III-V compound layer and the slanted field plates.