| 摘要 |
Disclosed is a semiconductor light-emitting device comprising (A) a light-emitting unit (20) composed of a first compound semiconductor layer (21) having a first conductivity type (hereinafter "compound semiconductor layer" is referred to as "layer"), an active layer (23) and a second layer (22) having a second conductivity type, and (B) a current blocking layer (40) formed in contact with the lateral surface of the light-emitting unit and composed of a third layer (43) having a first conductivity type and a fourth layer (44) having a second conductivity type. The impurity making the first layer (21) have the first conductivity type is composed of such an impurity that the substitution site of the impurity in the first layer (21) does not compete with the substitution site of the impurity in the second layer (22), which impurity makes the second layer (22) have the second conductivity type. The impurity making the third layer (43) have the first conductivity type is composed of such an impurity that the substitution site of the impurity in the third layer (43) competes with the substitution site of the impurity in the fourth layer (44), which impurity makes the fourth layer (44) have the second conductivity type. In this semiconductor light-emitting device, leakage current in the current blocking layer can be further reduced.
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