SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.

主权项

1. A semiconductor device including a p-channel conductivity type field effect transistor formed on a semiconductor substrate comprised of silicon,
wherein a first gate electrode of the p-channel conductivity type field effect transistor for applying a compressive stress to a first channel formation region of the p-channel conductivity type field effect transistor is formed on the semiconductor substrate, wherein the compressive stress is applied by the first gate electrode in a gate length direction, wherein, due to the application of the compressive stress by the first gate electrode, a lattice constant of the silicon comprising the semiconductor substrate in the first channel formation region is smaller than a lattice constant of the silicon under a state when the compressive stress is not applied to the first channel formation region, and wherein the first gate electrode is configured to increase a current which flows in the first channel formation region in response to the compressive stress.