Plasma CVD apparatus and processes.

摘要

Processes for producing and using a novel CVD apparatus (11) for depositing silicon layers onto suitable substrates and for the in-situ etching removal of background silicon deposits from the interior walls of the apparatus. The invention comprises using an apparatus having a fused quartz reaction chamber (14) and precoating the interior wall of the reaction chamber with a thin continuous barrier layer of Al2O3 (24) which is inert to the etching gas introduced for the removal of the background silicon deposits. <IMAGE>