MANUFACTURING PROCESS OF COMPOUND SEMICONDUCTOR DEVICE USING ALAS PROTECTION LAYER

摘要

The compound semiconductor device, which forms electric channel by activating a gallium arsenide substrate(10) implanted with ions, is composed of (A) forming an aluminum arsenide layer(30) and gallium arsenide layer(40) on a gallium arsenide substrate(10) where an ion implanted layer(20) is formed by epitaxial method, (B) forming a silica layer(50) on the gallium arsenide layer(40) by PECVD method, (C) heat-treating the substrate(10) at elevated temperature, and (D) etching the silica layer(50), gallium arsenide layer(40) and aluminum arsenide layer(30). When the silica layer(50) is etched, the buffer oxide film etchant is used.