| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing equipment which does not generate contaminating metals which are impurities in a reaction chamber and also provide a method for manufacturing a semiconductor device using the equipment. SOLUTION: In a reaction chamber S, a titanium film and a titanium nitride film and the like are formed. A substrate holder 10 is constituted of a nickel alloy which has superior in anti-corrosion property against chloride. A silicon nitride film 11 is formed on an upper face of the substrate holder 10 in a thickness of about 5,000Å. This silicon nitride film 11 is formed by thermal CVD in a reaction chamber S prior to formation of a titanium film and a titanium nitride film on the surface of a semiconductor substrate. A resistance heater H controls the temperature of the substrate holder 10, while the formed films are being processed. Reactive gas and unconverted gas generated in the film formation are exhausted out of the reaction chamber S through an exhaust line L. An upper electrode E is formed in an upper part of the reaction chamber S.
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