Vertically integrated IGFET device

摘要

An integrated device which incorporates a plurality of interconnected vertical IGFETs on a single substrate is described. A monocrystalline silicon region extends from an area of the substrate surface and a plurality of insulated gate electrodes are disposed so as to be contiguous with the monocrystalline silicon region. Each of the insulated gate electrodes can be selectively biased with a predetermined voltage so as to create an inversion channel in a segment of the monocrystalline silicon region contiguous therewith.