FLASH MEMORY AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A flash memory is provided to form a floating gate whose edge is sharp and form an insulation layer of a desired thickness on the floating gate, by depositing and selectively etching a sacrificial oxide layer, by depositing and etching a nitride layer so as to form a sidewall and by burying a polycrystalline silicon layer in the sidewall. CONSTITUTION: A floating gate oxide layer(14) is formed in a predetermined region of a semiconductor substrate(11). The floating gate(15') whose upper edge is sharp is formed on the floating gate oxide layer. An insulation layer(16) of a uniform thickness is formed on the semiconductor substrate and the floating gate. A control gate(17') is formed on the insulation layer.