| 摘要 |
PROBLEM TO BE SOLVED: To more accurately prevent a power transistor from being overheated by placing a temperature detection transistor immune to the effect of a parasitic transistor in the vicinity of the power transistor for driving an inductive load or the like. SOLUTION: The temperature detection NPN (n-semiconductor/p-semiconductor/n-semiconductor) bipolar transistor whose collector and base are connected to the point of a power supply potential Vcc and whose emitter is connected to the point of a second power supply potential Vgnd via a current passing means Isa is arranged close to the power transistor QA, and the emitter potential Vsa of the temperature detection transistor Qsa is compared with a reference potential Vref and a thermal protection signal Stsd is outputted. COPYRIGHT: (C)2004,JPO&NCIPI
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