| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a semiconductor device, the method including forming an insulating layer on a substrate; forming a metallic hardmask pattern on the insulating layer; forming a recess by partially etching the insulating layer; forming a metallic protection layer on an inner side wall of the recess; etching the insulating layer to form a hole that penetrates the insulating layer by using the metallic hardmask pattern and the metallic protection layer as etching masks; and removing the metallic hardmask pattern and the metallic protection layer. |
| 申请公布号 |
US2016293444(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201514961918 |
申请日期 |
2015.12.08 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK Jae-hong;YOON Jun-ho;HAN Je-woo;MIN Gyung-jin;KIM Dong-chan;JEON Kyung-yub;PARK Jin-young |
| 分类号 |
H01L21/311;H01L21/3205 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming an insulating layer on a substrate; forming a metallic hardmask pattern on the insulating layer; forming a recess by partially etching the insulating layer; forming a metallic protection layer on an inner side wall of the recess; etching the insulating layer to form a hole that penetrates the insulating layer by using the metallic hardmask pattern and the metallic protection layer as etching masks; and removing the metallic hardmask pattern and the metallic protection layer. |
| 地址 |
Suwon-si KR |
