Method for via plating with seed layer

摘要

Presented herein is a method for plating comprising providing a substrate having a dielectric layer formed over a trace, and forming a via/trench opening extending through the dielectric layer, the via/trench opening exposing a surface of the trace. The method further comprises forming a seed layer in the via/trench opening and contacting the trace and forming a protection layer over the seed layer. The protection layer is removed and a conductive layer deposited on the seed layer in a single plating process step by applying a plating solution in the via/trench opening.

主权项

1. A method of forming a structure, comprising:
forming an opening in a material layer; lining the opening with a metallic protection layer; and simultaneously removing the metallic protection layer and depositing a conductor in the opening.