Method for determining electrical parameters used to programme a resistive random access memory

摘要

A method determines electrical parameters for programming a resistive random access memory in an insulating state and in a conducting state, by formation or dissolution of a filament.

主权项

1. A method for determining electrical parameters for programming a resistive random access memory in an insulating state and in a conducting state, said memory comprising first and second electrodes separated by a layer made of electrically insulating material, and passing from the insulating state to the conducting state by formation of a conducting filament between the first and second electrodes, the method comprising:
supplying a set of parameters comprising a target retention time of the insulating and conducting states, a maximum resistance value in the conducting state and a minimum resistance value in the insulating state; simulating retention curves of the conducting state corresponding to different dimensions of the conducting filament, each retention curve of the conducting state representing an increase in resistance in the conducting state as a function of a retention time; determining the retention curve of the conducting state reaching the maximum resistance value in the conducting state after a retention time equal to the target retention time; determining an initial resistance value in the conducting state from said retention curve of the conducting state; determining the programming parameter of the conducting state from the initial resistance value in the conducting state; simulating retention curves of the insulating state corresponding to different dimensions of the conducting filament, each retention curve of the insulating state representing the reduction in resistance in the insulating state as a function of the retention time; determining the retention curve of the insulating state reaching the minimum resistance value in the insulating state after a retention time equal to the target retention time; determining an initial resistance value in the insulating state from the retention curve of the insulating state; determining the programming parameter of the insulating state from the initial resistance value in the insulating state.