发明名称 Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate
摘要 Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber.
申请公布号 US9617150(B2) 申请公布日期 2017.04.11
申请号 US201314049988 申请日期 2013.10.09
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Chu Chia-Hua;Cheng Chun-Wen
分类号 B81C3/00;B81C1/00;B81B7/00 主分类号 B81C3/00
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A micro-electro mechanical system (MEMS) device, comprising: a semiconductor substrate; a dielectric layer formed over the semiconductor substrate; a plurality of conductive pads formed in the dielectric layer; a MEMS substrate bonded with the dielectric layer, wherein the MEMS substrate comprises: a semiconductor layer having a sensing element;a closed chamber surrounding the sensing element; anda blocking layer having a first portion formed between the semiconductor layer and the dielectric layer, wherein the blocking layer is configured to block gas, coming from the dielectric layer, from entering the closed chamber, and the blocking layer has a second portion extending from the first portion upward toward the semiconductor layer; an etch stop layer above the first portion of the blocking layer and surrounding the chamber, wherein the etch stop layer is spaced apart from the first portion of the blocking layer; and a conductive plug penetrating through the semiconductor layer of the MEMS substrate and the first portion of the blocking layer.
地址 Hsinchu TW