| 发明名称 |
INTEGRATION OF SEMICONDUCTOR EPILAYERS ON NON-NATIVE SUBSTRATES |
| 摘要 |
An article includes a support substrate bonded to heterostructure epitaxial layers that include one or more electronic devices. The support substrate has a bonding surface and the heterostructure epitaxial layers have a surface with the epitaxial growth direction of the heterostructure epitaxial layers towards the surface. The surface of the heterostructure epitaxial layers is bonded at the bonding surface of the support substrate by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate. |
| 申请公布号 |
US2017012101(A1) |
申请公布日期 |
2017.01.12 |
| 申请号 |
US201514796440 |
申请日期 |
2015.07.10 |
| 申请人 |
Palo Alto Research Center Incorporated |
发明人 |
Chua Christopher L.;Wang Qian;Krusor Brent S.;Lu JengPing;Limb Scott J. |
| 分类号 |
H01L29/205;H01L29/267;H01L21/02;H01L29/20 |
主分类号 |
H01L29/205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An article, comprising:
a support substrate having bonding surface; and heterostructure epitaxial layers that include one or more electronic devices, the heterostructure epitaxial layers having a surface and an epitaxial growth direction towards the surface, the heterostructure epitaxial layers bonded to the support substrate at the surface of the heterostructure epitaxial layers by ion exchange between the surface of the heterostructure epitaxial layers and the bonding surface of the support substrate, wherein the support substrate and the heterostructure epitaxial layers are configured to powderize together in response to a trigger. |
| 地址 |
Palo Alto CA US |
