发明名称 IN-LINE PLASMA CVD DEVICE
摘要 Provided is an in-line plasma CVD apparatus (100) capable of performing a deposition process at a high production efficiency while maintaining stable deposition conditions, without spending time and energy on cleaning and the like even when in use for a long time. This plasma CVD apparatus (100) is equipped with a deposition chamber (1) and load-lock chambers (20, 30) which are separate from the deposition chamber (1). The apparatus (100) is of the in-line-type for conveying a substrate between these chambers and producing a film on the substrate. The deposition chamber (1) is equipped with a vacuum chamber (2), a vacuum exhaust means (3) for discharging the air inside the vacuum chamber (2), a gas supply unit (9) for supplying a source gas into the vacuum chamber (2), and a plasma generation power supply (10) for generating plasma inside the vacuum chamber (2). Substrates in the deposition chamber (1) are divided into a first group (18) connected to one pole of the plasma generation power supply (10), and a second group (19) connected to the other pole of the plasma generation power supply (10). The plasma is produced between the first group (18) and the second group (19) which have different polarities from one another.
申请公布号 EP2940183(A4) 申请公布日期 2016.09.07
申请号 EP20130868944 申请日期 2013.12.12
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) 发明人 TAMAGAKI, HIROSHI;HAGA, JUNJI
分类号 C23C16/458;C23C16/26;C23C16/44;C23C16/503;H01J37/32 主分类号 C23C16/458
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