发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method of manufacturing a semiconductor device. The method includes forming memory cells which share a data storage layer; performing a first strong program operation on first memory cells, arranged in a checker board pattern among the memory cells; performing a first annealing process after the first strong program operation; performing a second strong program operation on second memory cells arranged in a reverse checker board pattern among the memory cells, and performing a slight program operation on the first memory cells; and performing a second annealing process after the second strong program operation and the slight program operation. |
申请公布号 |
US2016093381(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201514619974 |
申请日期 |
2015.02.11 |
申请人 |
SK hynix Inc. |
发明人 |
LEE Dong Hun |
分类号 |
G11C16/10;H01L21/324;H01L27/115 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming memory cells which share a data storage layer; performing a first strong program operation on first memory cells, arranged in a checker board pattern among the memory cells performing a first annealing process after the first strong program operation; performing a second strong program operation on second memory cells arranged in a reverse checker board pattern, among the memory cells, and performing a slight program operation on the first memory cells; and performing a second annealing process after the second strong program operation and the slight program operation. |
地址 |
Icheon-si Gyeonggi-do KR |