COPPER WIRE THROUGH SILICON VIA CONNECTION

摘要

A semiconductor device includes a semiconductor substrate having opposing first and second main surfaces, a via (TSV) extending from the first main surface of the substrate to the second main surface of the substrate, first electrical connectors formed near the first main surface and second electrical connectors formed near the second main surface. There are insulated bond wires, each extending through the via and having a first end bonded to a respective one of the first electrical connectors and a second end bonded to a respective one of the second electrical connectors. The via may be filled with an encapsulating material.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate having opposing first and second main surfaces; a via extending from the first main surface of the semiconductor substrate to the second main surface of the semiconductor substrate; a plurality of first electrical connectors formed proximate the first main surface of the semiconductor substrate; at least one redistribution layer having a first surface attached to the second main surface of the semiconductor substrate, and a plurality of second electrical connectors formed on the first surface of the redistribution layer and exposed in the via; and a plurality of insulated bond wires, each extending through the via and having a first end bonded to a respective one of the plurality of first electrical connectors and a second end bonded to a respective one of the plurality of second electrical connectors.