| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for improving use efficiency of gas to be used for etching processing.SOLUTION: In a method for forming a hollow structure, a method for forming the hollow structure on a substrate by removing a sacrificial layer formed on the substrate includes: an installation step for installing a substrate in a reaction chamber of an etching apparatus; a first step for exhausting gas from the reaction chamber while supplying etching gas for etching the sacrificial layer to the reaction chamber; a second step for exhausting gas from the reaction chamber without supplying the etching gas to the reaction chamber; and an extraction step for extracting the substrate from the reaction chamber; where a cycle including the first step and the second step is repeated at least twice between the installation step and the extraction step to perform etching.SELECTED DRAWING: Figure 2 |
