| 发明名称 |
ETCHING METHOD, METHOD OF MANUFACTURING ARTICLE, AND ETCHING SOLUTION |
| 摘要 |
An etching method according to an embodiment includes forming a catalyst layer made of a noble metal on a structure made of a semiconductor, and dipping the structure in an etching solution containing hydrofluoric acid, an oxidizer, and an organic additive to remove a portion of the structure that is in contact with the catalyst layer. |
| 申请公布号 |
US2016079078(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514845818 |
申请日期 |
2015.09.04 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
ASANO Yusaku |
| 分类号 |
H01L21/306;C09K13/08 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An etching method comprising:
forming a catalyst layer made of a noble metal on a structure made of a semiconductor; and dipping the structure in an etching solution containing hydrofluoric acid, an oxidizer, and an organic additive to remove a portion of the structure that is in contact with the catalyst layer. |
| 地址 |
Minato-ku JP |
