| 发明名称 |
NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE |
| 摘要 |
A non-volatile semiconductor storage device includes a plurality of gate electrodes stacked in a first direction, a channel portion facing the gate electrodes and extending in the first direction, and first and second charge storage layers between the gate electrode and the channel portion in a second direction crossing the first direction, wherein the second charge storage layer has portions that are between the gate electrodes in the first direction. |
| 申请公布号 |
US2016064409(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514811660 |
申请日期 |
2015.07.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAEGASHI Toshitake |
| 分类号 |
H01L27/115;H01L29/423;H01L21/28;H01L29/51 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile semiconductor storage device comprising:
a plurality of gate electrodes stacked in a first direction; a channel portion facing the gate electrodes and extending in the first direction; and first and second charge storage layers between the gate electrodes and the channel portion in a second direction crossing the first direction, wherein the second charge storage layer has portions that are between the gate electrodes in the first direction. |
| 地址 |
Tokyo JP |
