发明名称 低屈折率のアモルファス透明導電膜作製用焼結体及び低屈折率のアモルファス透明導電膜
摘要 A sintered compact characterized by comprising: zinc (Zn); gallium (Ga), aluminum (Al), or boron (B); germanium (Ge) or silicon (Si); magnesium (Mg); oxygen (O); and fluorine (F); and in satisfying the relationship 10 ≤ A + B + C ≤ 70, where A is the content of gallium (Ga), aluminum (Al), or boron (B) converted to mol% in terms of Ga2O3, Al2O3, or B2O3, B is the content of germanium (Ge) or silicon (Si) converted to mol% in terms of GeO2 or SiO2, and C is the content of magnesium (Mg) converted to mol% in terms of MgF2. In particular, a low-refractive-index amorphous thin film can be formed which has low bulk resistance and is capable of DC sputtering.
申请公布号 JP5866024(B2) 申请公布日期 2016.02.17
申请号 JP20140535838 申请日期 2013.11.26
申请人 JX金属株式会社 发明人 奈良 淳史
分类号 C04B35/453;C23C14/24;C23C14/34 主分类号 C04B35/453
代理机构 代理人
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