Semiconductor device and method of forming an IPD beneath a semiconductor die with direct connection to external devices

摘要

A semiconductor device has a conductive layer formed on a substrate. The conductive layer has a first portion constituting contact pads and a second portion constituting an integrated passive device such as an inductor. A spacer is formed on the substrate around the second portion of the conductive layer. The spacer can be insulating material or conductive material for shielding. A semiconductor die is mounted to the spacer. An electrical connection is formed between contact pads on the semiconductor die and the contact pads on the substrate. An encapsulant is formed around the semiconductor die, electrical connections, spacer, and conductive layer. The substrate is removed to expose the conductive layer. An interconnect structure is formed on the backside of the substrate. The interconnect structure is electrically connected to the conductive layer. The semiconductor device can be integrated into a package.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a substrate; forming a conductive layer directly on the substrate including a first portion constituting first contact pads and a second portion of the conductive layer constituting an inductor formed between and substantially coplanar with the first portion; providing a semiconductor die including an insulating spacer; mounting the semiconductor die to the substrate over the second portion of the conductive layer with the insulating spacer directly contacting the semiconductor die and the substrate; forming electrical connections between second contact pads on the semiconductor die and the first contact pads on the substrate; forming an encapsulant around the semiconductor die, electrical connections, insulating spacer, and conductive layer; and removing the substrate to expose the conductive layer.