One time programming memory cell, array structure and operating method thereof

摘要

A one time programming memory cell includes a transistor (T), a first varactor (Va), and a second varactor (Va'). The transistor has a gate terminal, a source terminal and a drain terminal. The gate terminal of the transistor is connected with a word line (WL). The source terminal of the transistor is connected with a bit line (BL). A first end of the first varactor is connected with the drain terminal of the transistor. A second end of the first varactor is connected with a first program line (PL1). A first end of the second varactor is connected with the drain terminal of the transistor. A second end of the second varactor is connected with a second program line (PL2).