TRENCH FORMATION IN A SEMICONDUCTOR MATERIAL,申请号EP20080729122-传众专利搜索

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发明名称	TRENCH FORMATION IN A SEMICONDUCTOR MATERIAL
摘要
申请公布号	EP2122677(A1)	申请公布日期	2009.11.25
申请号	EP20080729122	申请日期	2008.02.06
申请人	FREESCALE SEMICONDUCTOR, INC.	发明人	HALL, MARK D.;ABELN, GLENN C.;GRANT, JOHN M.
分类号	H01L21/336;H01L21/762;H01L27/11	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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