| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide production of a resist pattern having more superior line width roughness (LWR) based on the more miniaturization of design dimension of semiconductor microfabrication. <P>SOLUTION: There are provided a salt having each one of a tertiary sulfur atom and a carboxylate group in the molecule, a resist composition containing the salt, and a production method for resist patterns, using the resist composition. As the salt, a salt represented by formula (I) is preferable. [In formula (I), A<SP POS="POST">1</SP>and A<SP POS="POST">2</SP>are each independently a 1-18C univalent organic group; A<SP POS="POST">3</SP>is a 1-18C bivalent organic group; and A<SP POS="POST">1</SP>and A<SP POS="POST">2</SP>may be bonded to each other to form a heterocycle with a sulfur atom bonded therewith, and A<SP POS="POST">1</SP>and A<SP POS="POST">3</SP>may be bonded to each other to form a heterocycle with a sulfur atom bonded therewith]. <P>COPYRIGHT: (C)2013,JPO&INPIT |
