METHOD AND COMPOSITION FOR SELECTIVELY REMOVING METAL HARDMASK AND OTHER RESIDUES FROM SEMICONDUCTOR DEVICE SUBSTRATES COMPRISING LOW-K DIELECTRIC MATERIAL AND COPPER

摘要

An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W relative to low-k materials from a semiconductor substrate comprising said low-k materials having a TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W etching mask thereon wherein the removal composition comprises at least one oxidizing agent and a carboxylate compound.

主权项

1. A removal composition having a pH in the range of from 2 to 14 for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, and alloys of Ti and W relative to low-k dielectric material from a semiconductor device substrate which comprises said low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W etching mask thereon, wherein said removal composition comprises:
(a) from 0.1 wt % to 90 wt % of an oxidizing agent; (b) from 0.0001 wt % to 50 wt % of an ammonium carboxylate; and (c) the balance up to 100 wt % of said removal composition comprising deionized water.