Work function tailoring for nonvolatile memory applications

摘要

Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.

主权项

1. A method of forming a nonvolatile memory element, comprising:
forming a first electrode layer comprising a first electrode material over a surface of a substrate; forming a first interface layer comprising a first interface material in contact with the first electrode layer; forming a second interface layer comprising a second interface material; forming a variable resistance layer comprising a variable resistance material in contact with the second interface layer; and heating the substrate; wherein the material in the first interface region has a work function greater than a work function of the first electrode material; wherein the second interface layer is disposed between the first interface layer and the variable resistance layer; wherein heating the substrate forms a first interface region that comprises the first interface material and the first electrode material; and wherein heating the substrate forms a second interface region that comprises the second interface material and the variable resistance material.