Doped electrodes used to inhibit oxygen loss in ReRAM device

摘要

A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance.

主权项

1. A nonvolatile memory element, comprising:
a first electrode layer; a second electrode layer; and a resistive switching layer disposed between the first electrode layer and the second electrode layer,
wherein the first electrode directly interfaces the resistive switching layer,wherein the resistive switching layer comprises a metal oxide,wherein the first electrode layer comprises a nitride and a first dopant, wherein the first dopant comprises one or more of beryllium, boron, lithium, sodium, magnesium, or combinations thereof,wherein the first dopant is only present in a portion of the first electrode directly interfacing the resistive switching layer.