发明名称 |
Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof |
摘要 |
Methods for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging a plurality of microelectronic device panels in a panel stack. Each microelectronic device panel contains plurality of microelectronic devices and a plurality of package edge conductors extending therefrom. Trenches are created in the panel stack exposing the plurality of package edge conductors, and a plurality of sidewall conductors is formed interconnecting different ones of the package edge conductors exposed through the trenches. The panel stack is then separated into a plurality of stacked microelectronic packages each including at least two microelectronic devices electrically interconnected by at least one of the plurality of sidewall conductors included within the stacked microelectronic package. |
申请公布号 |
US9159702(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201213591924 |
申请日期 |
2012.08.22 |
申请人 |
FREESCALE SEMICONDUCTOR INC. |
发明人 |
Gong Zhiwei (Tony);Vincent Michael B;Hayes Scott M;Wright Jason R |
分类号 |
H01L21/00;H01L25/065;H01L23/00 |
主分类号 |
H01L21/00 |
代理机构 |
Ingrassia Fisher & Lorenz, P.C. |
代理人 |
Ingrassia Fisher & Lorenz, P.C. |
主权项 |
1. A method for fabricating stacked microelectronic packages, comprising:
arranging a plurality of microelectronic device panels in a panel stack, each microelectronic device panel containing plurality of microelectronic devices and a plurality of package edge conductors extending therefrom; creating trenches in the panel stack exposing the plurality of package edge conductors; forming a plurality of sidewall conductors interconnecting different ones of the package edge conductors exposed through the trenches, forming comprising:
depositing an electrically-conductive material into the trenches contacting the plurality of package edge conductors to produce conductor-filled trenches; andremoving selected portions of the electrically-conductive material to produce a series of linearly-spaced vertical openings in each conductor-filled trench, the series of linearly-spaced vertical openings partially defining the plurality of sidewall conductors; and separating the panel stack into a plurality of stacked microelectronic packages each comprising at least first and second sidewall conductors, the first sidewall conductor electrically isolated from the second sidewall conductor by one of the linearly-spaced vertical openings during removal of selected portions of the electrically-conductive material. |
地址 |
Austin TX US |