| 摘要 |
PURPOSE:To obtain P-N structure, P-I-N structure, N-P-N structure and doping superlattice structure, in which doping profiles steeply change in a monoatomic layer order, by alternately introducing a trimethyl organometallic compound containing a group III element and a hydride containing a group V element onto a substrate. CONSTITUTION:An undoped GaAs layer 2, a P-type GaAs layer 3 and an undoped GaAs layer 4 are formed onto a GaAs substrate 1. The undoped layers 2 and 4 are shaped by alternately flowing triethylgallium (TEG) diluted with hydrogen and arsine onto the substrate 1, flowing a trace quantity of arsine (AsH3) diluted with hydrogen at all times. Carrier concentration extends over approximately 10<14>em<-3>. The concentra tion 1X10<-5> mol fraction of arsine is brought to concentration in which GaAs is not shaped by a reaction with TEG. Consequently, the P-type layer having a steep profile in high concentration and a monoatomic layer order can be formed. Since carrier concentration in a doping layer is also controlled easily and treatment at a low temper ature is enabled, the profile of an N-type layer is not also broken by a diffusion. Accordingly, the profile of the interface such as a P-N junction, a P-I-N junction, an N-P-N junction, a doping superlattice, etc. manufactured in this manner is made extremely sharp. |
