| 摘要 |
The present application discloses a method for manufacturing a full silicide metal gate bulk silicon multi-gate fin field effect transistor, which comprises the steps of: forming at least one fin on the semiconductor substrate; forming a gate stack structure on top and side surfaces of the fin; forming a source/drain extension area in the fin on both sides of the gate stack structure; forming a source/drain area on both sides of the source/drain extension area; forming silicide on the source/drain area; forming a full silicide metal gate electrode; and forming contact and implementing metalization. The present invention eliminates the self-heating effect and the floating body effect of SOI devices, then has a much lower cost, overcomes such defects as the polysilicon gate depletion effect, Boron penetration effect, and large series resistance of polysilicon gate electrodes, and has good compatibility with the planar COMS technology, thus it can be easily integrated.
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