EPITAXIAL GROWTH METHOD FOR THE LATTICE MISMATCHED TO SUBSTRATE

摘要

The present invention relates to an epitaxial growth method of a compound semiconductor having lattice mismatch with a substrate, including the steps of: forming a quantum dot with a material having a lager lattice constant than the substrate on the substrate; depositing and forming a seed layer on the quantum dot with the same material as the quantum dot or a material having the same lattice constant as the quantum dot; and forming a buffer layer on the seed layer with the same material as the seed layer. According to the epitaxial growth method of the compound semiconductor having lattice mismatch with the substrate, provided is an advantage of being able to form a semiconductor layer of high quality by mitigating growth restriction due to lattice mismatch between a substrate and a growth target material and restriction as to an applicable material.