EUV multilayer mirror with interlayer and lithographic apparatus using the mirror

摘要

A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.

主权项

1. A multilayer mirror constructed and arranged to reflect radiation having a wavelength in a range of about 6.4 nm-about 7.2 nm, the multilayer mirror having alternating layers, the alternating layers comprising a first layer and a second layer, the first and second layers being selected from the group consisting of: U and B4C layers, Th and B4C layers, U and B9C layers, Th and B9C layers, U and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, U compound and B9C layers, Th compound and B9C layers, U compound and B layers, and Th compound and B layers, wherein at least one of the first layers is separated from a second layer by an interlayer disposed between the at least one of the first layers and the second layer.