WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCHING

摘要

PROBLEM TO BE SOLVED: To provide a method of dicing semiconductor wafers where each wafer is mounted with a plurality of integrated circuits.SOLUTION: A method includes a step of forming a mask on a semiconductor wafer 100. The mask is composed of a layer covering and protecting integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to form a patterned mask with gaps. By patterning, regions 102 between the integrated circuits of the semiconductor wafer is exposed. The semiconductor wafer is then etched through the gaps in the patterned mask to dice the integrated circuits.