| 发明名称 | Substrate for integrated circuit and method for forming the same | ||
| 摘要 | The present invention relates to substrates for ICs and method for forming the same. The method comprises the steps of: forming a hard mask layer on the bulk silicon material; etching the hard mask layer and the bulk silicon material to form a first part for shallow trench isolation of at least one trench; forming a dielectric film on the sidewall of the at least one trench; further etching the bulk silicon material to deepen the at least one trench so as to form a second part of the at least one trench; completely oxidizing or nitridizing parts of the bulk silicon material which are between the second parts of the trenches, and parts of the bulk silicon material which are between the second parts of the trenches and side surfaces of the bulk silicon substrate; filling dielectric materials in the first and second parts of the at least one trench; and removing the hard mask layer. | ||
| 申请公布号 | US9048286(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201113159351 | 申请日期 | 2011.06.13 |
| 申请人 | Institute of Microelectronics, Chinese Academy of Sciences | 发明人 | Zhong Huicai;Liang Qingqing;Yin Haizhou;Luo Zhijiong |
| 分类号 | H01L21/76;H01L21/762 | 主分类号 | H01L21/76 |
| 代理机构 | Martine Penilla Group, LLP | 代理人 | Martine Penilla Group, LLP |
| 主权项 | 1. A method for manufacturing a substrate, comprising the steps of: forming a hard mask layer on a bulk silicon material; etching the hard mask layer and the bulk silicon material to form a first part for shallow trench isolation of at least one trench; forming a dielectric film on the sidewall of the at least one trench, further etching the bulk silicon material to deepen the at least one trench so as to form a second part of the at least one trench; completely nitridizing only parts of the bulk silicon material which are between the second parts of the trenches, and only parts of the bulk silicon material which are between the second parts of the trenches and side surfaces of the bulk silicon substrate, thereby forming a first dielectric material; filling a second dielectric material different from the first dielectric material in the first and second parts of the at least one trench; and removing the hard mask layer. | ||
| 地址 | Beijing CN | ||